lead-free gree n ds30721 rev. 2 - 2 1 of 5 dmn5l06t www.diodes.com diodes incorporated dmn5l06t n-channel enhancement mode field effect transistor features n-channel mosfet low on-resistance very low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package lead free by design/rohs compliant (note 2) ?green? device (note 3) maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss 50 v drain-gate voltage r gs 1.0m v dgr 50 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous i d 280 ma drain current (note 1) pulsed i dm 1.5 a total power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient (note 1) r ja 833 c/w operating and storage temperature range t j ,t stg -55 to +150 c mechanical data case: sot-523 case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals connections: see diagram terminals: finish matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 marking: date code and type code, see page 2 ordering & date code information: see page 2 weight: 0.006 grams (approximate) notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com/products/lead_free/index.php . source equivalent circui t gate drain a b c g m l j d h n k top view d g s sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 all dimensions in mm new product
ds30721 rev. 2 - 2 2 of 5 dmn5l06t www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 50 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t a = 85c @ t c = 125c i dss 0.1 1 500 a v ds = 50v, v gs = 0v v ds = 20v, v gs = 0v v ds = 50v, v gs = 0v gate-body leakage @ t a = 25c @ t a = 85c i gss 20 1 na a v gs = 20v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 0.49 1.2 v v ds =v gs , i d = 250 a static drain-source on-resistance r ds (on) 1.6 2.2 3 4 v gs = 2.7v, i d = 0.2a, v gs = 1.8v, i d = 50ma on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance y fs 200 ms v ds =10v, i d = 0.2a source-drain diode forward voltage v sd 0.5 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 5.0 pf new product 0 0.3 0.6 0.9 01 2 3 4 5 v ds , drain-source voltage (v) fi g .1 t y pical output characteristics i d , drain current (a) 1.2 1 .5 6v 10v 5v 3v 4v v=10v 8v 6v 5v 4v 3v gs 8v v , gate-source voltage (v) fi g .2 t y pical transfer characteristics gs 0.01 3 i, d drain current (a) 0.001 0.1 1 0 0.5 1 1.5 2 2.5 3.5 v = 10v pulsed ds t = 150 c a t = 125 c a t=85c a t=25c a t=-55c a t=0c a t=-25c a
ds30721 rev. 2 - 2 3 of 5 dmn5l06t www.diodes.com 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v=5v pulsed gs t=-55c a t=150c a t=-25c a t=25c a t=0c a t=125c a t=85c a v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source volta g e gs, 0 1 2 3 4 5 6 7 8 0 5 10 15 20 t=25c pulsed a i = 140ma d i = 280ma d new product t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch 0 -50 -25 0 25 50 75 100 125 150 v gate threshold voltage (v) gs(th), 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 . 8 -75 v=10v i=1ma pulsed ds d 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 0.001 0.01 0.1 1 v = 10v pulsed gs t=150c a t=-55c a t=125c a t=-25c a t=85c a t=0c a t=25c a t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance vs. channel tem p erature 0.5 0.9 0.7 1.9 1.7 1.5 1.3 1.1 2.1 2 .5 2.3 -50 -25 0 25 50 75 100 125 150 i = 140ma d v = 10v pulsed gs i = 280ma d i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v, fig. 8 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) t=-55c a t=-25c a t=25c a t=85c a t=125c a t=150c a v=0v pulsed gs
ds30721 rev. 2 - 2 4 of 5 dmn5l06t www.diodes.com new product 1 0.001 0.01 0.1 1 0 0.5 i , reverse drain current (a) dr v, fig. 9 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) t = 25c pulsed a v=0v gs v = 10v gs 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current |y |, forward transfer admittance (s) fs 0.001 0.01 0.1 0.01 0.1 1 v = 10v pulsed ds t= a -55 c t= a -25 c t= a 0c t=25c a t= a 85 c t= a 125 c t= a 150 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 11, deratin g curve - total a p , power dissipation (mw) d ordering information (note 5) device packaging shipping DMN5L06T-7 sot-523 3000/tape & reel notes: 4. short duration test pulse used to minimize self-heating effect. 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
ds30721 rev. 2 - 2 5 of 5 dmn5l06t www.diodes.com new product month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2005 2006 2007 2008 2009 code stuvw date code key k5l ym k5l = product type marking code ym = date code marking y = year ex: s = 2005 m = month ex: 9 = september marking information important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of diodes incorporated.
|
